H2N3417 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

H2N3417

NPN SILICON TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6267-B

Issued Date : 1992.11.25

Revised Date : 2000.09.01

Page No. : 2/3

Current Gain & Collector Current

1000

10000

Saturation Voltage & Collector Current

hFE @ VCE=4.5V

100

10

0.1

1

10

100

Collector Current (mA)

1000

Capacitance & Reverse-Biased Voltage

100

10

Cob

1

0.1

1

10

100

Reverse-Biased Voltage (V)

700

600

500

400

300

200

100

0

0

PD-Ta

20 40 60 80 100 120 140 160

Ambient Temperature-Ta(oC)

1000

100

10

0.1

VBE(sat) @ IC=50/3IB

VCE(sat) @ IC=50/3IB

1

10

100

Collector Current (mA)

1000

10000

1000

100

Safe Operating Area

PT=1ms

PT=100ms

PT=1s

10

1

1

10

100

Forward Voltage-VCE (V)

HSMC Product Specification

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