H2N6517 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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H2N6517 Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6268-B
Issued Date : 1993.10.05
Revised Date : 2000.09.25
Page No. : 1/4
H2N6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6517 is designed for general purpose applications requiring high
breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• The H2N6517 is complementary to H2N6520
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................ 350 V
VEBO Emitter to Base Voltage.......................................................................................................... 5 V
IC Collector Current .................................................................................................................. 500 mA
IB Base Current ........................................................................................................................ 250 mA
Characteristics (Ta=25°C, *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
350
-
-
V
IC=100uA, IE=0
BVCEO
350
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=10uA, IC=0
ICBO
-
-
50
nA VCB=250V, IE=0
IEBO
-
-
50
nA VEB=5V, IC=0
*VCE(sat)1
-
-
0.30
V
IC=10mA, IB=1mA
*VCE(sat)2
-
-
0.35
V
IC=20mA, IB=2mA
*VCE(sat)3
-
-
0.50
V
IC=30mA, IB=3mA
*VCE(sat)4
-
-
1
V
IC=50mA, IB=5mA
VBE(on)
-
-
2
V
IC=100mA, VCE=10V
*VBE(sat)1
-
-
0.75
V
IC=10mA, IB=1mA
*VBE(sat)2
-
-
0.85
V
IC=20mA, IB=2mA
*VBE(sat)3
-
-
0.90
V
IC=30mA, IB=3mA
*hFE1
20
-
-
VCE=10V, IC=1mA
*hFE2
30
-
-
VCE=10V, IC=10m
*hFE3
30
-
200
VCE=10V, IC=30mA
*hFE4
20
-
200
VCE=10V, IC=50mA
*hFE5
15
-
-
VCE=10V, IC=100mA
fT
40
-
200
MHz IC=10mA, VCE=20V, f=20MHz
Cob
-
-
6
pF VCB=20V, f=1MHz, IE=0
HSMC Product Specification
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