LS5018 Просмотр технического описания (PDF) - STMicroelectronics
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LS5018 Datasheet PDF : 5 Pages
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LS5018B/LS5060B/LS5120B
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient on printed circuit with recommended pad
layout
ELECTRICAL CHARACTERISTICS (Tamb =25°C)
Symbol
Parameter
IRM
Leakage current at stand-offvoltage
VRM
Stand-off voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
Value
80
Unit
°C/W
Type
IRM @ VRM
max.
µA
LS5018B
5
LS5060B
10
LS5120B
20
Note 1 : Measured at 50Hz (1 cycle)
Note 2 : See test circuit
Note 3 : VR = 5 V, F = 1MHz.
V
16
50
100
VBR @ IR
min.
VBO @ IBO
max. typ.
note 1
V
mA
V
mA
17
1
22 1300
60
1
85 1000
120
1
180 1250
IH
min.
note 2
mA
200
200
250
C
max.
note 3
pF
150
150
150
2/5
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