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L6911E Просмотр технического описания (PDF) - STMicroelectronics

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L6911E Datasheet PDF : 34 Pages
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Electrical characteristics
4
Electrical characteristics
L6911E
Table 5. Electrical characteristic (VCC = 12V; TA = 25°C unless otherwise specified)
Symbol
Parameter
Test condition
Min
VCC supply current
Icc Vcc supply current
UGATE and LGATE open
Power-ON
Turn-On VCC threshold
VOCSET = 4.5V
Turn-Off VCC threshold
VOCSET = 4.5V
3.6
Rising VOCSET threshold
ISS Soft start current
Oscillator
Free running frequency
Total Variation
VOSC Ramp amplitude
RT = OPEN
180
6 K< RT to GND < 200 K
-15
RT = OPEN
Reference and DAC
DACOUT voltage accuracy
VID Pull-Up voltage
VID0, VID1,VID2, VID3, VID25mV -1
see Table 6 on page 9;
TA = 0 to 70°C
Error amplifier
GBWP
SR
DC gain
Gain-bandwidth product
Slew-rate
COMP = 10pF
Gate drivers
IUGATE High side source current
VBOOT - VPHASE = 12V,
1
VUGATE - VPHASE = 6V
RUGATE High side sink resistance
VBOOT - VPHASE = 12V,
IUGATE = 300mA
ILGATE Low side source current
VCC = 12V, VLGATE = 6V
0.9
RLGATE Low side sink resistance
Vcc=12V, ILGATE = 300mA
Output driver dead time
PHASE connected to GND
Protections
Over voltage trip (VSEN/DACOUT) VSEN rising
IOCSET OCSET current source
VOCSET = 4.5V
170
Typ
5
1.26
10
200
1.9
3.1
88
15
10
1.3
2
1.1
1.5
120
117
200
Max
4.6
220
15
1
4
3
120
230
Unit
mA
V
V
V
µA
kHz
%
Vp-p
%
V
dB
MHz
V/µS
A
A
nS
%
µA
8/34

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