DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

L6393 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
L6393
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6393 Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
L6393
Half-bridge gate driver
Features
High voltage rail up to 600 V
dV/dt immunity ± 50 V/nsec in full temperature
range
Driver current capability:
– 290 mA source,
– 430 mA sink
Switching times 75/35 nsec rise/fall with 1 nF
load
3.3 V, 5 V CMOS/TTL inputs comparators with
hysteresis
Integrated bootstrap diode
Uncommitted comparator
Adjustable dead-time
Compact and simplified layout
Bill of material reduction
Flexible, easy and fast design
Application
Motor driver for home appliances
Factory automation
Industrial drives and fans
HID ballasts
Power supply units
3/
$)0
Description
The L6393 is a high-voltage device manufactured
with the BCD “OFF-LINE” technology. It is a single
chip half-bridge gate driver for N-channel power
MOSFET or IGBT.
The high side (floating) section is designed to
stand a voltage rail up to 600 V.
The logic inputs are CMOS/TTL compatible down
to 3.3 V for easy interfacing microcontroller/DSP.
The IC embeds an uncommitted comparator
available for protections against overcurrent,
overtemperature, etc.
Table 1.
Device summary
Order codes
L6393N
L6393D
L6393DTR
Package
DIP-14
SO-14
Packaging
Tube
Tape and reel
August 2010
Doc ID 14497 Rev 4
1/19
www.st.com
19

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]