L6393 Просмотр технического описания (PDF) - STMicroelectronics

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L6393

Half-bridge gate driver

STMicroelectronics 

L6393

Electrical characteristics

Table 8. DC operation electrical characteristics (continued)

Symbol Pin

Parameter

Test condition

Min Typ Max Unit

IPHASEh

IPHASEl

PHASE logic “1” input bias current

1

PHASE logic “0” input bias current

PHASE = 15 V

PHASE = 0 V

20 40 100

1

IBRAKEh

IBRAKEl

BRAKE logic “1” input bias current

3

BRAKE logic “0” input bias current

BRAKE = 15 V

BRAKE = 0 V

20 40 100

µA

1

ISDh

SD logic “1” input bias current

2

ISDl

SD logic “0” input bias current

SD = 15 V

SD = 0 V

10 30 100

1

1. VBO = Vboot - Vout

2. RDSon is tested in the following way:

RDSon = [(VCC - VCBOOT1) - (VCC - VCBOOT2)] / [I1(VCC,VCBOOT1) - I2(VCC,VCBOOT2)] where I1 is pin 14 current when

VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2.

Table 9. Sense comparator

Symbol Pin

Parameter

Vio

Input offset voltage

8, 9

Iib

Input bias current

Vol

6 Open drain low level output voltage

td_comp

Comparator delay

SR

6 Slew rate

Test conditions

VCP+ = 1 V

Iod = - 3 mA

Rpu = 100 kΩ to 5 V;

VCP- = 0.5 V

CL = 180 pF, Rpu = 5 kΩ

Min Typ Max Unit

-15

15 mV

1 µA

0.5 V

90 130 ns

60

V/µs

Doc ID 14497 Rev 4

11/19

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