L6591TR(2008) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

L6591TR
(Rev.:2008)

PWM controller for ZVS half-bridge

STMicroelectronics 

L6591

Electrical characteristics

Table 4.

Electrical characteristics (continued)

(TJ = 0 to 105 °C, Vcc = 15 V, VBOOT = 12 V, CHVG = CLVG = 1 nF; RT = 22 kΩ,

CT = 330 pF; unless otherwise specified)

Symbol

Parameter

Test condition

Min Typ Max Unit

VCCrestart HV generator restart voltage (1)

(1) After DIS tripping

4.4

5

5.6

V

12.2 13.2 14.2 V

Reference voltage

VREF Output voltage

VREF Total variation

IREF Short circuit current

Sink capability in UVLO

(2) TJ = 25 °C;

IREF = 1 mA

Vcc= 9.2 to 22 V,

IREF = 1 to 5 mA

VREF = 0

Vcc = 6 V;

Isink = 0.5 mA

4.9

5

5.1

V

4.8

5.2

V

10

30 mA

0.2 0.5

V

Current sense comparator

IISEN

tLEB

Input bias current

Leading edge blanking

VISEN = 0

After VHVG low-to-high

transition

-1

µA

200

ns

td(H-L) Delay to output

Gain

VISENx Maximum signal

VISENdis Hiccup-mode OCP level

(2) VCOMP = 5 V

(2)

170 ns

3.8

4

4.2 V/V

0.76 0.8 0.84 V

1.4 1.5 1.65 V

PWM control and burst-mode control

VCOMPH Maximum level

ICOMP Source current

RCOMP Dynamic resistance

VCOMPBon Burst-mode on threshold

Hys Burst-mode hysteresis

Dmax Maximum duty cycle

Adaptive UVLO

VCOMPL UVLO shift threshold

Line sensing

ICOMP = 0

VCOMP = 2 V

VCOMP = 2 to 4 V

(2) VCOMP falling

VCOMP rising

VCOMP = 5 V

(2)

5.5

V

240 320 400 µA

25

kΩ

1.68 1.75 1.82 V

70

mV

45

50

%

1.9

2

2.1

V

Vth

IHys

Vclamp

Threshold voltage

Current hysteresis

Clamp level

Voltage rising or falling 1.22 1.25 1.28 V

Vcc > 5 V

13.2 14.7 16.2 µA

ILINE = 1 mA

2.8

3

V

9/32

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