L6591TR(2008) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

L6591TR
(Rev.:2008)

PWM controller for ZVS half-bridge

STMicroelectronics 

L6591

Electrical characteristics

Table 4.

Symbol

Electrical characteristics (continued)

(TJ = 0 to 105 °C, Vcc = 15 V, VBOOT = 12 V, CHVG = CLVG = 1 nF; RT = 22 kΩ,

CT = 330 pF; unless otherwise specified)

Parameter

Test condition

Min Typ Max Unit

tr

Rise time

UVLO saturation

Vcc = 0 to VccOn,

Isink = 1 mA

High-side gate driver (voltages referred to FGND)

80

ns

1.1

V

VHVGL Output low voltage

VHVGH

Isourcepk

Isinkpk

Output high voltage

Peak source current (3)

Peak sink current (3)

tf

Fall time

tr

Rise time

Pull-down resistor

Isink = 200 mA

Isource = 5 mA

1.5

V

11 11.9

V

-0.3

A

0.8

A

40

ns

80

ns

25

kΩ

1. Parameters in tracking each other

2. Parameters in tracking each other

3. Parameters guaranteed by design

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