L6370Q(2011) Просмотр технического описания (PDF) - STMicroelectronics
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L6370Q Datasheet PDF : 16 Pages
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Electrical specifications
L6370Q
Table 5.
Symbol
Electrical characteristics (continued)
Parameter
Test condition
Voth1
Output status threshold 1
voltage
Voth2
Output status threshold 2
voltage
(See Figure 3)
Vohys
Output status threshold
hysteresis
Iosd Output status source current Vout > Voth1; Vos = 2.5V
Vosd
Active output status driver drop Vs - Vos; Ios = 2mA
voltage
Tamb = 0 to +85°C
Ioslk
Output status driver leakage
current
Vout < Voth2; Vos = 0V
VS = 9.5 to 35V
Vdgl Diagnostic drop voltage
D1 / D2 = L; Idiag= 0.5mA
D1 / D2 = L; Idiag= 3mA
Idglk Diagnostic leakage current
D1 / D2 = H; 0 < Vdg < Vs
VS = 9.5 to 35V
Source drain NDMOS diode
Vfsd Forward on voltage
Ifp
Forward peak current
trr
Reverse recovery time
tfr
Forward recovery time
Thermal characteristics
@ Ifsd = 2.5A
t = 10ms; d = 20%
If = 2.5A di/dt = 25A/μs
ΘLim
ΘTH
Junction temp. protect.
Thermal hysteresis
Note:
Vil ≤ 0.8V, Vih ≥ 2V @ (V+In > V-In)
Min. Typ. Max. Unit
4.5
5
5.5
V
4
4.5
5.0
V
300
500
700
mV
2
4
mA
1.5
3
V
25
μA
40
250
mV
5
μA
1
1.5
V
6
A
200
ns
100
ns
135
150
°C
20
°C
2.4
AC operation
Table 6. AC operation
Symbol
Parameter
Test condition
Min.
tr - tf
td
dV/dt
Rise or fall time
Delay time
Slew rate (rise and fall edge)
VS = 24V; RI = 70Ω; Rl to ground
0.7
tON
On time during short circuit
condition
50pF < CDON < 2nF
tOFF
Of time during short circuit
condition
fmax Maximum operating frequency
Typ.
20
5
1
1.28
64
25
Max.
1.5
Unit
μs
μs
V/μs
μs/pF
tON
KHz
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Doc ID 022313 Rev 1
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