L6206 Просмотр технического описания (PDF) - STMicroelectronics

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L6206

DMOS DUAL FULL BRIDGE DRIVER

STMicroelectronics 

L6206

CIRCUIT DESCRIPTION

POWER STAGES and CHARGE PUMP

The L6206 integrates two independent Power MOS

Full Bridges. Each Power MOS has an Rd-

son=0.3ohm (typical value @ 25°C), with intrinsic

fast freewheeling diode. Cross conduction protection

is achieved using a dead time (td = 1µs typical) be-

tween the switch off and switch on of two Power MOS

in one leg of a bridge.

Using N Channel Power MOS for the upper transis-

tors in the bridge requires a gate drive voltage above

the power supply voltage. The Bootstrapped (Vboot)

supply is obtained through an internal Oscillator and

few external components to realize a charge pump

circuit as shown in Figure 3. The oscillator output

(VCP) is a square wave at 600kHz (typical) with 10V

amplitude. Recommended values/part numbers for

the charge pump circuit are shown in Table1.

Table 1. Charge Pump External Components

Values

CBOOT

CP

RP

D1

220nF

10nF

100Ω

1N4148

D2

1N4148

Figure 3. Charge Pump Circuit

VS

D1

D2

CBOOT

RP

CP

VCP VBOOT

VSA VSB D01IN1328

LOGIC INPUTS

Pins IN1A, IN2A, IN1B, IN2B, ENA and ENB are TTL/

CMOS and uC compatible logic inputs. The internal

structure is shown in Fig. 4. Typical value for turn-on

and turn-off thresholds are respectively Vthon=1.8V

and Vthoff = 1.3V.

Pins ENA and ENB are commonly used to implement

Overcurrent and Thermal protection by connecting

them respectively to the outputs OCDA and OCDB,

which are open-drain outputs. If that type of connec-

tion is chosen, some care needs to be taken in driving

these pins. Two configurations are shown in Fig. 5

and Fig. 6. If driven by an open drain (collector) struc-

ture, a pull-up resistor REN and a capacitor CEN are

connected as shown in Fig. 5. If the driver is a stan-

dard Push-Pull structure the resistor REN and the ca-

pacitor CEN are connected as shown in Fig. 6. The

resistor REN should be chosen in the range from

2.2kΩ to 180KΩ. Recommended values for REN and

CEN are respectively 100KΩ and 5.6nF. More infor-

mation on selecting the values is found in the Over-

current Protection section.

Figure 4. Logic Inputs Internal Structure

5V

ESD

PROTECTION

D01IN1329

Figure 5. ENA and ENB Pins Open Collector

Driving

5V

OCDA or OCDB

5V

REN

OPEN

COLLECTOR

OUTPUT

CEN ENA or ENB

D02IN1355

Figure 6. ENA and ENB Pins Push-Pull Driving

OCDA or OCDB

5V

PUSH-PULL

OUTPUT

REN

CEN

ENA or ENB

D02IN1356

TRUTH TABLE

INPUTS

EN

IN1

IN2

OUTPUTS

OUT1 OUT2

L

X

X

High Z High Z

H

L

L

GND

GND

H

H

L

Vs

GND

H

L

H

GND

Vs

H

H

H

Vs

Vs

X

= Don't care

High Z = High Impedance Output

8/23

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