L6206 Просмотр технического описания (PDF) - STMicroelectronics

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L6206

DMOS DUAL FULL BRIDGE DRIVER

STMicroelectronics 

L6206

ELECTRICAL CHARACTERISTICS (continued)

(Tamb = 25 °C, Vs = 48V, unless otherwise specified)

Symbol

Parameter

Test Conditions

IIH High Level Logic Input Current 7V Logic Input Voltage

Vth(ON) Turn-on Input Threshold

Vth(OFF) Turn-off Input Threshold

Vth(HYS) Input Threshold Hysteresis

Switching Characteristics

tD(on)EN Enable to out turn ON delay time (7) ILOAD =2.8A, Resistive Load

tD(on)IN Input to out turn ON delay time ILOAD =2.8A, Resistive Load

(dead time included)

tRISE Output rise time(7)

ILOAD =2.8A, Resistive Load

tD(off)EN Enable to out turn OFF delay time (7) ILOAD =2.8A, Resistive Load

tD(off)IN Input to out turn OFF delay time ILOAD =2.8A, Resistive Load

tFALL Output Fall Time (7)

ILOAD =2.8A, Resistive Load

tdt Dead Time Protection

fCP Charge pump frequency

-25°C<Tj <125°C

Over Current Detection

Is over Input Supply Over Current

DetectionThreshold

-25°C<Tj <125 °C; RCL= 39 kΩ

-25°C<Tj <125 °C; RCL= 5 kΩ

-25°C<Tj <125 °C; RCL= GND

ROPDR Open Drain ON Resistance

I = 4mA

tOCD(ON) OCD Turn-on Delay Time (8)

I = 4mA; CEN < 100pF

tOCD(OFF) OCD Turn-off Delay Time (8)

I = 4mA; CEN < 100pF

(6) Tested at 25°C in a restricted range and guaranteed by characterization.

(7) See Fig. 1.

(8) See Fig. 2.

Min Typ Max Unit

10

µA

1.8

2.0

V

0.8

1.3

V

0.25 0.5

V

100 250 400

ns

1.6

µs

40

250

ns

300 550 800

ns

600

ns

40

250

ns

0.5

1

0.6

µs

1

MHz

-10% 0.57 +10% A

-10% 4.42 +10% A

-30% 5.6 +30% A

40

60

Ω

200

ns

100

ns

6/23

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