KSP25 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSP25

NPN Epitaxial Silicon Darlington Transistor

Fairchild Semiconductor 

KSP25/26/27

Darlington Transistor

• Collector-Emitter Voltage: VCES=KSP25: 40V

KSP26: 50V

KSP27: 60V

• Collector Power Dissipation: PC (max) =625mW

1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCES

Collector-Emitter Voltage

: KSP25

: KSP26

: KSP27

VEBO

IC

PC

TJ

TSTG

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

40

50

60

10

500

625

150

-55~150

Units

V

V

V

V

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCES

Collector-Emitter Breakdown Voltage

: KSP25

: KSP26

: KSP27

IC=100µA, IE=0

BVCBO

Collector-Base Breakdown Voltage

: KSP25

: KSP26

: KSP27

IC=100µA, IE=0

ICBO

IEBO

hFE

Collector Cut-off Current

: KSP25

: KSP26

: KSP27

Emitter Cut-off Current

* DC Current Gain

VCE (sat) * Collector-Emitter Saturation Voltage

VBE (on) * Base-Emitter On Voltage

* Pulse Test: PW≤300µs, Duty Cycle≤2%

VCE=30V, IE=0

VCE=40V, IE=0

VCE=50V, IE=0

VEB=10V, IB=0

VCE=5V, IC=10mA

VCE=5V, IC=100mA

IC=100mA, IB=0.1mA

VCE=5V, IC=100mA

Min.

40

50

60

40

50

60

10K

10K

Max. Units

V

V

V

V

V

V

100

nA

100

nA

100

nA

100

nA

1.5

V

2

V

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

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