KSH13008A Просмотр технического описания (PDF) - Semihow
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KSH13008A Datasheet PDF : 6 Pages
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KSH13008A
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
600
300
9
12
24
6
100
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
12 Amperes
NPN Silicon Power Transistor
100 Watts
TO-220
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min Typ. Max Unit
Collector-Emitter Sustaining Voltage
VCEO(sus) IC=10mA, IB=0
300
V
Emitter Cut-off Current
IEBO
VEB=9V,IC=0
1
㎃
*DC Current Gain
hFE1
hFE2
VCE=5V,IC=5A
VCE=5V,IC=8A
8
40
6
30
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=5A,IB=1A
IC=8A,IB=1.6A
IC=12A,IB=3A
1
V
1.5
V
3
V
*Base-Emitter Saturation Voltage
VBE(sat)
IC=5A,IB=1A
IC=8A,IB=1.6A
1.2
V
1.6
V
Output Capacitance
Cob
VCB=10V, f=0.1MHz
180
㎊
Current Gain Bandwidth Product
fT
VCE=10V,IC=0.5A
4
㎒
Turn on Time
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
ton
Vcc=125V, Ic=8A
tstg
IB1=1.6A, IB2= -1.6A
tF
RL=15.6Ω
Package Mark information.
1.1
㎲
3
㎲
0.7
㎲
hFE1
Classification
R
O
Y
8 ~ 17
15~28
26 ~ 39
Y1(26~33), Y2(31~39)
S
YWW Z
KSH13008A
S
YWW
Z
SemiHow Symbol
Y; year code, WW; week code
hFE1 Classification
◎ SEMIHOW REV.A1,Oct 2007
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