D1616A(2002) Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

D1616A
(Rev.:2002)

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

100

IB = 300µA

80

IB = 250µA

60

IB = 200µA

IB = 150µA

40

IB = 100µA

20

IB = 50µA

0

0

2

4

6

8

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

1000

100

VCE = 2V

10

1

0.01

0.1

1

10

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

1000

100

IE=0

f = 1MHz

10

1

1

10

100

VCB [V], COLLECTOR-BASE VOLTAGE

Figure 5. Collector Output Capacitance

©2002 Fairchild Semiconductor Corporation

1.0

IB = 5.0mA

IB = 4.5mA

0.8

= 4.0mA

IB

IB = 3.5mA

IB = 3.0mA

IB = 2.5mA

IB = 2.0mA

0.6

IB = 1.5mA

0.4

IB = 1.0mA

0.2

IB = 0.5mA

0.0

0.0

0.2

0.4

0.6

0.8

1.0

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 2. Static Characteristic

10

1

VBE(sat)

IC = 20 IB

0.1

VCE(sat)

0.01

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10

VCC = -10V

IC = 10IB1 = -10IB2

1

tSTG

0.1

tF

tON

0.01

-0.001

-0.01

-0.1

-1

IC[A], COLLECTOR CURRENT

Figure 6. Switching Time

Rev. A2, September 2002

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