KSC5386 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

KSC5386

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

KSC5386

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1.2A

ICES

Collector Cutoff Current

VCE= 1400V; RBE= 0

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC=0

hFE

DC Current Gain

IC= 1A; VCE= 5V

VECF

C-E Diode Forward Voltage

tf

Fall Time

IF= 6A

IC= 4A; IB1= 0.8A; IB2= -1.6A;

VCC= 200V

MIN TYP. MAX UNIT

4

V

5.0

V

1.5

V

1

mA

10 μA

40

250 mA

8

2.0

V

0.2 μs

isc Website：www.iscsemi.cn

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