KSC5338 Просмотр технического описания (PDF) - Inchange Semiconductor

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KSC5338

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

KSC5338

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage

VCE(sat)-2 Collector-Emitter Saturation Voltage

VBE(sat)-1 Base-Emitter Saturation Voltage

VBE(sat)-2 Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC= 1A; IB=B 0.1A

IC= 2A; IB=B 0.4A

IC= 1A; IB=B 0.1A

IC= 2A; IB=B 0.4A

VCB= 800V; VBE= 0

IEBO

Emitter Cutoff Current

VEB= 9V; IC=0

hFE-1

DC Current Gain

IC= 0.5A; VCE= 5V

hFE-2

DC Current Gain

IC= 2A; VCE= 1V

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

IE= 0; VCB= 10V; ftest= 0.1MHz

IC= 0.1A ;VCE= 6V

Switching Times

ton

Turn-On Time

ts

Storage Time

tf

Fall Time

IC= 1A; IB1= -IB2=0.2A;

VCC= 125V

MIN TYP. MAX UNIT

1000

V

450

V

9

V

0.8

V

0.5

V

1.1

V

1.25 V

10 μA

10 μA

15

30

6

70

pF

14

MHz

0.2 μs

2.0 μs

0.5 μs

isc Website：www.iscsemi.cn

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