J5502 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

J5502

NPN Planar Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

VCE(DSAT) Dynamic Saturation Voltage

IC=0.4A, IB1=80mA

VCC=300V

@ 1µs

@ 3µs

IC=1A, IB1=200mA

VCC=300V

@ 1µs

@ 3µs

RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s)

tON

Turn On Time

tOFF

Turn Off Time

tON

Turn On Time

tOFF

Turn Off Time

INDUCTIVE LOAD SWITCHING (VCC=15V)

tSTG

Storage Time

tF

Fall Time

tC

Cross-over Time

tSTG

Storage Time

tF

Fall Time

tC

Cross-over Time

IC=0.4A, IB1=80mA

IB2=0.2A, VCC=300V

RL = 750Ω

TC=25°C

TC=125°C

TC=25°C

TC=125°C

IC=1A, IB1=160mA

IB2=160mA,

VCC=300V

RL = 300Ω

TC=25°C

TC=125°C

TC=25°C

TC=125°C

IC=0.4A, IB1=80mA

IB2=0.2A, VZ=300V

LC=200uH

TC=25°C

TC=125°C

TC=25°C

TC=125°C

TC=25°C

TC=125°C

IC=0.8A, IB1=160mA

IB2=160mA,

VCC=300V

LC=200uH

TC=25°C

TC=125°C

TC=25°C

TC=125°C

TC=25°C

TC=125°C

Min Typ. Max. Units

11

V

8

V

23

V

13

V

250 350

ns

260

ns

3.3

4.0

µs

3.8

µs

220 450

ns

250

ns

4.3

5.0

µs

5.0

µs

1.4

2.0

µs

1.7

µs

130 200

ns

80

ns

210 350

ns

130

ns

4.9

5.5

µs

5.3

µs

170 250

ns

340

ns

300 600

ns

810

ns

© 2008 Fairchild Semiconductor Corporation

KSC5502 Rev. A1

3

www.fairchildsemi.com

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