KSC5338F Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSC5338F

NPN Silicon Transistor

Fairchild Semiconductor 

KSC5338F

High Voltage Power Switch Switching

Application

• High Speed Switching

• Wide SOA

1

TO-220F

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

IBP

PC

TJ

TSTG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

Base Current (Pulse)

Collector Dissipation (TC=25°C)

Junction Temperature

Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE(sat)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

Collector-Emitter Saturation Voltage

VBE(sat)

Base-Emitter Saturation Voltage

Cob

Output Capacitance

Cib

Input Capacitance

fT

Current Gain Bandwidth Product

tON

Turn ON Time

tSTG

Storage Time

tF

Fall Time

* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%

Test Condition

IC = 1mA, IE = 0

IC = 5mA, IB =0

IC=1mA, IE=0

VCB = 800V, VBE = 0

VEB = 9V, IC = 0

VCE = 5V, IC = 0.5A

VCE = 1V, IC = 2A

IC = 1A, IB = 0.1A

IC = 2A, IB = 0.4A

IC = 1A, IB = 0.1A

IC = 2A, IB = 0.4A

VCB = 10V, f =1MHz

VEB=8V, IC=0, f =1MHz

VCE = 10V, IC = 0.1A

VCC = 125V, IC = 1A

IB1 = 0.2A, IB2 = -0.2A

RL=125Ω

Value

1000

450

9

5

10

2

4

40

150

- 65 ~ 150

Units

V

V

V

A

A

A

A

W

°C

°C

Min.

1000

450

9

15

6

Typ.

0.55

70

1000

14

Max.

10

10

30

0.8

0.5

1.1

1.25

200

2

500

Units

V

V

V

µA

µA

V

V

V

V

pF

pF

MHz

ns

µs

ns

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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