KSC5302D Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSC5302D Datasheet PDF : 6 Pages
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Typcial Characteristics
3.0
2.5
I = 200mA
BI = 180mA
IB = 160mA
2.0
BI = 140mA
IB = 120mA
IBB = 100mA
1.5
I = 80mA
B
I = 60mA
B
IB = 40mA
1.0
0.5
IB = 0
0.0
0
1
2
3
4
5
6
7
8
9
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
Ta = 125oC
25oC
-20oC
10
V = 1V
CE
1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
10
I = 5I
C
B
25oC
1
Ta = 125oC
0.1
-20oC
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Base Saturation Voltage
©2002 Fairchild Semiconductor Corporation
100
Ta = 125oC
25oC
-25oC
10
V = 5V
CE
1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
1
VBE(sat)
VCE(sat)
0.1
I = 10 I
C
B
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
I = 5I
C
B
1
-20oC
25oC
Ta = 125oC
0.1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 6. Base-Emitter Saturation Voltage
Rev. B1, December 2002
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