KSC5302D Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSC5302D Datasheet PDF : 6 Pages
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KSC5302D
High Voltage High Speed Power Switch
Application
Equivalent Circuit
C
• High Breakdown Voltage : BVCBO=800V
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
B
• No need to interest an hFE value because of low variable storage-time
spread
• Even though corner spirit product
• Low base drive requirement
1
TO-220
E
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(TC=25°C)
Junction Temperature
Storage Temperature
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja
Junction to Ambient
Value
800
400
12
2
5
1
2
50
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Rating
2.5
62.5
Unit
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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