KSC1675 Просмотр технического описания (PDF) - Fairchild Semiconductor

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KSC1675

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSC1675

FM/AM RF AMP, MIX, CONV,OSC,IF

• Collector-Base Voltage : VCEO=30V

• High Current Gain Bandwidth Product : fT=300MHz (TYP.)

• Low Collector Capacitance : COB=2.0pF (TYP.)

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

TSTG

Storage Temperature

Value

50

30

5

50

250

150

-55 ~ 150

Units

V

V

V

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VBE (on)

VCE (sat)

fT

Cob

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Base-Emitter On Voltage

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

IC=10µA, IE=0

IC=5mA, IB=0

IE=10µA, IC=0

VCB=50V, IE=0

VEB=5V, IC=0

VCE=6V, IC=1mA

VCE=6V, IC=1mA

IC=10mA, IB=1mA

VCE=6V, IC=1mA

VCB=6V, IE=0, f=1MHz

Min.

50

30

5

40

150

Typ.

0.67

0.08

300

2.0

Max.

0.1

0.1

240

0.75

0.3

2.5

Units

V

V

V

µA

µA

V

V

MHz

pF

hFE Classification

Classification

hFE

R

40 ~ 80

O

70 ~ 140

Y

120 ~ 240

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

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