KMB7D0NP30QA Просмотр технического описания (PDF) - KEC

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Компоненты Описание

производитель

KMB7D0NP30QA

N and P-Ch Trench MOSFET

KEC 

KMB7D0NP30QA

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Dynamic

SYMBOL

TEST CONDITION

Total Gate Charge

N-Ch

: VDS=15V, ID=6.6A,

VGS=10V

(Fig.1)

P-Ch

: VDS=-15V, ID=-5A,

VGS=-10V

(Fig.3)

Qg

N-Ch

: VDS=15V, ID=6.6A,

VGS=4.5V

(Fig.1)

P-Ch

: VDS=-15V, ID=-5A,

VGS=-4.5V

(Fig.3)

Gate-Source Charge

Gate-Drain Charge

N-Ch

Qgs

: VDS=15V, ID=6.6A,

VGS=10V

(Fig.1)

P-Ch

Qgd

: VDS=-15V, ID=-5A,

VGS=-10V

(Fig.3)

Turn-on Delay time

Turn-on Rise time

Turn-off Delay time

Turn-off Fall time

td(on)

tr

td(off)

tf

N-Ch

: VDD=15V, ID=6.6A,

VGS=10V, RG=3Ω (Fig.2)

P-Ch

: VDD=-15V, VGS=-10V,

RG=3Ω, RL=2.7Ω (Fig.4)

Input Capacitance

Output Capacitance

Reverse transfer Capacitance

Ciss

N-Ch

Coss

: VDS=15V, VGS=0V, f=1.0MHz

P-Ch

: VDS=-15V, VGS=0V, f=1.0MHz

Crss

Note 1>* Pulse test : Pulse width≤300㎲, Duty Cycle≤2%.

MIN. TYP. MAX. UNIT

N-Ch -

16.4 20.5

P-Ch -

13

16

N-Ch -

7.2

9

nC

P-Ch -

6.25 7.8

N-Ch -

4

-

P-Ch -

2.6

-

N-Ch -

2.6

-

P-Ch -

2.9

-

N-Ch -

7.4

-

P-Ch -

4.7

-

N-Ch -

27.7

-

P-Ch -

7.8

-

ns

N-Ch -

12.2

-

P-Ch -

47.2

-

N-Ch -

7.6

-

P-Ch -

22.6

-

N-Ch -

742

-

P-Ch -

820

-

N-Ch -

126

-

pF

P-Ch -

137

-

N-Ch -

76

-

P-Ch -

89

-

2011. 3. 18

Revision No : 3

3/9

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