KMB7D0NP30QA(2007) Просмотр технического описания (PDF) - KEC

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Компоненты Описание

производитель

KMB7D0NP30QA
(Rev.:2007)

N and P-Ch Trench MOSFET

KEC 

KMB7D0NP30QA

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Static

SYMBOL

TEST CONDITION

Drain-Source Breakdown Voltage

Drain Cut-off Current

BVDSS

IDSS

ID=250 A, VGS=0V,

ID=-250 A, VGS=0V,

VGS=0V, VDS=24V

VGS=0V, VDS=-24V

Gate Leakage Current

IGSS

VGS= 22V, VDS=0V

Gate Threshold Voltage

Drain-Source ON Resistance

ON State Drain Current

Forward Transconductance

Source-Drain Diode Forward

Voltage

Vth

RDS(ON)*

ID(ON)*

gfs*

VSD*

VDS=VGS, ID=250 A

VDS=VGS, ID=-250 A

VGS=10V, ID=7A

VGS=-10V, ID=-5A

VGS=4.5V, ID=6A

VGS=-4.5V, ID=-4A

VGS=4.5V, VDS=5V

VGS=-10V, VDS=-5V

VDS=5V, ID=6.6A

VDS=-5V, ID=-5A

IS=1.7A, VGS=0V

IS=-1.7A, VGS=0V

MIN. TYP. MAX. UNIT

N-Ch 30

-

-

V

P-Ch -30

-

-

N-Ch -

-

1

A

P-Ch

-

-

-1

N-Ch -

-

100

nA

P-Ch

-

-

100

N-Ch 1.0

-

3

V

P-Ch -1.0

-

-3

N-Ch -

18 23.5

P-Ch

-

N-Ch -

35 45.5

m

30

39

P-Ch

-

62

80

N-Ch 20

-

-

A

P-Ch -20

-

-

N-Ch -

10

-

S

P-Ch

-

9

-

N-Ch -

0.7 1.2

V

P-Ch

-

-0.8 -1.2

2007. 6. 28

Revision No : 2

2/9

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