KM416C256DL-7 Просмотр технического описания (PDF) - Samsung
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KM416C256DL-7 Datasheet PDF : 8 Pages
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KM416C256D, KM416V256D
AC CHARACTERISTICS (Continued)
Parameter
Symbol
Data set-up time
Data hold time
Refresh period (Normal)
Refresh period (L-ver)
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge to W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hlod time (CAS -before-RAS refresh)
RAS to CAS precharge time
CAS precharge time (CBR counter test cycle)
Access time from CAS precharge
Fast Page mode cycle time
Fast Page read-modify-write cycle time
CAS precharge time (Fast Page cycle)
RAS pulse width (Fast Page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
tDS
tDH
tREF
tREF
tCWD
tRWD
tAWD
tCPWD
tCSR
tCHR
tRPC
tCPT
tCPA
tPC
tPRWC
tCP
tRASP
tRHCP
tOEA
tOED
tOEZ
tOEH
tRASS
tRPS
tCHS
Note) *1 : 5V only
*1-5
Min Max
0
10
8
128
37
72
47
52
10
10
5
20
30
35
77
10
50
100K
30
15
12
0
12
15
100
90
-50
-6
Min Max
0
10
8
128
37
82
52
57
10
10
5
20
35
40
82
10
60
100K
35
15
12
0
12
15
100
110
-50
CMOS DRAM
-7
Min Max
0
15
8
128
47
97
62
67
10
10
5
25
40
45
97
10
70
100K
40
20
17
0
17
20
100
130
-50
Units
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
Notes
9,19
9,19
7,14
7
7
7
17
18
3
13
6
11
11
11
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