KM416C1200CJ Просмотр технического описания (PDF) - Samsung
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KM416C1200CJ Datasheet PDF : 34 Pages
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KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
KM416V1000C
Max
KM416V1200C KM416C1000C
ICC1
Don′t care
-5
-6
90
80
140
130
90
80
ICC2
Normal
L
Don′t care
1
1
1
1
2
1
ICC3
Don′t care
-5
-6
90
80
140
130
90
80
ICC4
Don′t care
-5
-6
90
80
90
80
90
80
ICC5
Normal
L
Don′t care
0.5
200
0.5
200
1
200
ICC6
Don′t care
-5
-6
90
80
140
130
90
80
ICC7
L
Don′t care
300
200
350
ICCS
L
Don′t care
150
150
200
KM416C1200C
140
130
2
1
140
130
90
80
1
200
140
130
250
200
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and UCAS, LCAS cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Don′t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver),
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
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