KF13N50F(2008) Просмотр технического описания (PDF) - KEC
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KF13N50F Datasheet PDF : 7 Pages
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KF13N50P/F
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250μA, VGS=0V
ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃
IDSS
VDS=500V, VGS=0V,
Vth
VDS=VGS, ID=250μA
IGSS
VGS=±30V, VDS=0V
RDS(ON)
VGS=10V, ID=6.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=400V, ID=13A
VGS=10V
(Note4,5)
VDD=250V
ID=13A
RG=25Ω
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD
IS=13A, VGS=0V
trr
IS=13A, VGS=0V,
Qrr
dIs/dt=100A/μs
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=6.0mH, IS=13A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤13A, dI/dt≤200A/μs, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300μs, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
500
-
-
V
-
0.63
-
V/℃
-
-
10
μA
2.0
-
4.0
V
-
- ±100 nA
-
0.35 0.44 Ω
-
35
-
-
9
-
nC
-
13
-
-
28
-
-
45
-
ns
-
105
-
-
55
-
-
1445
-
-
210
-
pF
-
20
-
-
-
13
A
-
-
52
-
-
1.4
V
-
360
-
ns
-
4.4
-
μC
1
1
KF13N50
P
801
2
KF13N50
F
801
2
1 PRODUCT NAME
2 LOT NO
2008. 10. 2
Revision No : 1
2/7
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