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KA5Q0765RTHYDTU Просмотр технического описания (PDF) - Unspecified

Номер в каталоге
Компоненты Описание
производитель
KA5Q0765RTHYDTU
ETC2
Unspecified ETC2
KA5Q0765RTHYDTU Datasheet PDF : 12 Pages
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KA5Q0765RTH
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-source on Resistance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
RDS(ON)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Note:
1. Pulse test : Pulse width 300µS, duty 2%
Condition
Min.
VGS = 0V, ID = 250µA
650
VDS = Max, Rating, VGS = 0V -
VDS= 0.8*Max., Rating
VGS = 0V, TC = 85°C
-
VGS = 10V, ID = 2.3A
-
-
VGS = 0V, VDS = 25V,
f = 1MHz
-
-
VDD= 0.5BVDSS, ID= 7.0A
-
(MOSFET switching
-
time are essentially
independent of operating
-
temperature)
-
VGS = 10V, ID = 7.0A,
VDS = 0.5B VDSS (MOSFET
-
Switching time are Essentially -
independent of operating
temperature)
-
Typ. Max.
-
-
- 200
- 300
1.4 1.6
1415 -
100 -
15 -
25 -
60 -
110 -
65 -
40 -
7
-
12 -
Unit
V
µA
µA
pF
nS
nC
3

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