KA5M0965QTU Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
KA5M0965QTU Datasheet PDF : 12 Pages
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Typical Performance Characteristics
KA5M0965Q
Top :
VGS
15 V
10 V
101
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Note :
1. 250µ s Pulse Test
2. TC = 25℃
100
101
VDS , Drain-Source Voltage [V]
Figure 1. Output Characteristics
1.3
1.2
VGS = 10V
1.1
VGS = 20V
1.0
0.9
0.8
0
2
4
6
8
10
12
14
16
ID , Drain Current [A]
Figure 3. On-Resistance vs. Drain Current
101
150℃
25℃
100
-55℃
10-1
2
※ Note
1. VDS = 50V
2. 250µ s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Thansfer Characteristics
101
100
150℃
25℃
※ Note :
1. VGS = 0V
2. 250µ s Pulse Test
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 4. Source-Drain Diode Forward Voltage
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance vs. Drain-Source Voltage
12
10
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
※ Note : ID = 8.5 A
0
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
Figure 6. Gate Charge vs. Gate-Source Voltage
5
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