K7R161884B Просмотр технического описания (PDF) - Samsung
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K7R161884B Datasheet PDF : 19 Pages
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K7R163684B
K7R161884B
512Kx36 & 1Mx18 QDRTM II b4 SRAM
GENERAL DESCRIPTION
The K7R163684B and K7R161884B are 18,874,368-bits QDR (Quad Data Rate)
Synchronous Pipelined Burst SRAMs.
They are organized as 524,288 words by 36bits for K7R163684B and 1,048,576 words by 18 bits for K7R161884B.
The QDR operation is possible by supporting DDR read and write operations through separate data output and input ports
with the same cycle. Memory bandwidth is maximized as data can be transferred into SRAM
on every rising edge of K and K, and transferred out of SRAM on every rising edge of C and C.
And totally independent read and write ports eliminate the need for high speed bus turn around.
Address for read and write are latched on alternate rising edges of the input clock K.
Data inputs, and all control signals are synchronized to the input clock (K or K).
Normally data outputs are synchronized to output clocks (C and C), but when C and C are tied high,
the data outputs are synchronized to the input clocks (K and K).
Read data are referenced to echo clock (CQ or CQ) outputs.
Common address bus is used to access address both for read and write operations.
The internal burst counter is fixed to 4-bit sequential for both read and write operations, requiring tow full clock bus cycles.
Any request that attempts to interrupt a burst operation in progress is ignored.
Synchronous pipeline read and late write enable high speed operations.
Simple depth expansion is accomplished by using R and W for port selection.
Byte write operation is supported with BW0 and BW1 (BW2 and BW3) pins.
Nibble write operation is supported with NW0 and NW1 pins for x8 device.
IEEE 1149.1 serial boundary scan (JTAG) simplifies monitoring package pads attachment status with system.
The K7R163684B and K7R161884B are implemented with SAMSUNG's high performance 6T CMOS technology
and is available in 165pin FBGA packages. Multiple power and ground pins minimize ground bounce.
READ OPERATIONS
Read cycles are initiated by activating R at the rising edge of the positive input clock K.
Address is presented and stored in the read address register synchronized with K clock.
For 4-bit burst DDR operation, it will access four 36-bit or 18-bit or 8-bit data words with each read command.
The first pipelined data is transferred out of the device triggered by C clock following next K clock rising edge.
Next burst data is triggered by the rising edge of following C clock rising edge.
The process continues until all four data are transferred.
Continuous read operations are initiated with K clock rising edge.
And pipelined data are transferred out of device on every rising edge of both C and C clocks.
In case C and C tied to high, output data are triggered by K and K instead of C and C.
When the R is disabled after a read operation, the K7R163684B and K7R161884B will first complete
burst read operation
before entering into deselect mode at the next K clock rising edge.
Then output drivers disabled automatically to high impedance state.
ECHO CLOCK OPERATION
To assure the output traceability, the SRAM provides the output Echo clock, pair of compliment clock CQ and CQ,
which are synchronized with internal data output.
Echo clocks run free during normal operation.
The Echo clock is triggered by internal output clock signal, and transferred to external through same structures
as output driver.
Rev. 5.0 July 2006
-6-
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