K7R161884B-FC25(2004) Просмотр технического описания (PDF) - Samsung
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K7R161884B-FC25 Datasheet PDF : 18 Pages
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K7R163684B
K7R161884B
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit, 1Mx18-bit QDRTM II b4 SRAM
FEATURES
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future
freguency scaling.
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O,
1.8V+0.1V/-0.1V for 1.8V I/O.
• Separate independent read and write data ports
with concurrent read and write operation
• HSTL I/O
• Full data coherency, providing most current data .
• Synchronous pipeline read with self timed late write.
• Registered address, control and data input/output.
• DDR(Double Data Rate) Interface on read and write ports.
• Fixed 4-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks(K and K) for accurate DDR timing at clock
rising edges only.
• Two input clocks for output data(C and C) to minimize
clock-skew and flight-time mismatches.
• Two echo clocks (CQ and CQ) to enhance output data
traceability.
• Single address bus.
• Byte write (x18, x36) function.
• Sepatate read/write control pin(R and W)
• Simple depth expansion with no data contention.
• Programmable output impenance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball array FBGA) with body size of 13x15mm
Organization
Part
Number
Cycle
Time
Access
Time
Unit
K7R163684B-FC30 3.3
0.45 ns
X36
K7R163684B-FC25 4.0
0.45 ns
K7R163684B-FC20 5.0
0.45 ns
K7R163684B-FC16 6.0
0.50 ns
K7R161884B-FC30 3.3
0.45 ns
X18
K7R161884B-FC25 4.0
0.45 ns
K7R161884B-FC20 5.0
0.45 ns
K7R161884B-FC16 6.0
0.50 ns
FUNCTIONAL BLOCK DIAGRAM
36 (or 18) DATA
D(Data in)
REG
17 (or 18) ADD
ADDRESS
REG
R
W
BWX
K
K
C
C
4 (or 2)
CTRL
LOGIC
CLK
GEN
17
(or 18)
72(or 36)
72(or 36)
WRITE DRIVER
512Kx36
(1Mx18)
MEMORY
ARRAY
72
(or 36)
72
(or 36)
SELECT OUTPUT CONTROL
144
(or 72)
36 (or 18)
Q(Data Out)
CQ, CQ
(Echo Clock out)
Notes: 1. Numbers in ( ) are for x18 device
QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Renesas, IDT, NEC and Samsung technology.
-2-
July. 2004
Rev 3.1
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