K7R161884B-FC16(2004) Просмотр технического описания (PDF) - Samsung

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Компоненты Описание

производитель

K7R161884B-FC16
(Rev.:2004)

512Kx36-bit, 1Mx18-bit QDRTM II b4 SRAM

Samsung 

K7R163684B

K7R161884B

512Kx36 & 1Mx18 QDRTM II b4 SRAM

AC ELECTRICAL CHARACTERISTICS (VDD=1.8V ±0.1V, TA=0°C to +70°C)

PARAMETER

SYMBOL

MIN

MAX

Input High Voltage

VIH (AC)

VREF + 0.2

-

Input Low Voltage

VIL (AC)

-

VREF - 0.2

Notes: 1. This condition is for AC function test only, not for AC parameter test.

2. To maintain a valid level, the transitioning edge of the input must :

a) Sustain a constant slew rate from the current AC level through the target AC level, VIL(AC) or VIH(AC)

b) Reach at least the target AC level

c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC)

Overershoot Timing

Undershoot Timing

UNIT

V

V

NOTES

1,2

1,2

VDDQ+0.5V

VDDQ+0.25V

VDDQ

20% tKHKH(MIN)

VIH

VSS

VSS-0.25V

VSS-0.5V

VIL

Note: For power-up, VIH ≤ VDDQ+0.3V and VDD ≤ 1.7V and VDDQ ≤ 1.4V t ≤ 200ms

OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C)

PARAMETER

SYMBOL

MIN

Supply Voltage

VDD

1.7

VDDQ

1.4

Reference Voltage

VREF

0.68

Ground

VSS

0

20% tKHKH(MIN)

MAX

1.9

1.9

0.95

0

UNIT

V

V

V

V

AC TEST CONDITIONS

Parameter

Core Power Supply Voltage

Output Power Supply Voltage

Input High/Low Level

Input Reference Level

Input Rise/Fall Time

Output Timing Reference Level

Symbol

VDD

VDDQ

VIH/VIL

VREF

TR/TF

Note: Parameters are tested with RQ=250Ω

Value

1.7~1.9

1.4~1.9

1.25/0.25

0.75

0.3/0.3

VDDQ/2

Unit

V

V

V

V

ns

V

AC TEST OUTPUT LOAD

VREF 0.75V

VDDQ/2

SRAM

50Ω

Zo=50Ω

250Ω

ZQ

- 10 -

July. 2004

Rev 3.1

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