K6X1008C2D-F Просмотр технического описания (PDF) - Samsung

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K6X1008C2D-F

128K x 8 bit Low Power CMOS Static RAM

Samsung 

K6X1008C2D Family

CMOS SRAM

RECOMMENDED DC OPERATING CONDITIONS1)

Item

Symbol

Supply voltage

Vcc

Ground

Vss

Input high voltage

VIH

Input low voltage

VIL

Note:

1. Commercial Product: TA=0 to 70°C, Otherwise specified

Industrial Product: TA=-40 to 85°C, Otherwise specified

Automotive Product: TA=-40 to 125°C, Otherwise specified

2. Overshoot: Vcc+3.0V in case of pulse width≤30ns.

3. Undershoot: -3.0V in case of pulse width≤30ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Min

4.5

0

2.2

-0.53)

Typ

Max

Unit

5.0

5.5

V

0

0

V

-

Vcc+0.52)

V

-

0.8

V

CAPACITANCE1) (f=1MHz, TA=25°C)

Item

Input capacitance

Input/Output capacitance

1. Capacitance is sampled, not 100% tested

Symbol

CIN

CIO

Test Condition

VIN=0V

VIO=0V

Min

Max

Unit

-

8

pF

-

10

pF

DC AND OPERATING CHARACTERISTICS

Item

Symbol

Test Conditions

Min Typ Max Unit

Input leakage current

Output leakage current

ILI VIN=Vss to Vcc

ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc

-1 - 1 µA

-1 - 1 µA

Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read

- - 5 mA

Average operating current

ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V, -

VIN≤0.2V or VIN≥VCC-0.2V

ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH,

-

VIN=VIH or VIL

- 7 mA

- 25 mA

Output low voltage

VOL IOL=2.1mA

- - 0.4 V

Output high voltage

VOH IOH=-1.0mA

2.4 - - V

Standby Current(TTL)

ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL

- - 0.4 mA

Standby Current(CMOS)

ISB1

CS1≥Vcc-0.2V, CS2≥Vcc-0.2V or

CS2≤0.2V, Other inputs=0~Vcc

K6X1008C2D-B

K6X1008C2D-F

K6X1008C2D-Q

- - 10 µA

- - 15 µA

- - 25 µA

4

Revision 1.0

September 2003

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