K6T1008C2E-GF70 Просмотр технического описания (PDF) - Samsung
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K6T1008C2E-GF70 Datasheet PDF : 10 Pages
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K6T1008C2E Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Product
Supply voltage
Vcc
K6T1008C2E Family
Ground
Vss
All Family
Input high voltage
VIH
K6T1008C2E Family
Input low voltage
VIL
K6T1008C2E Family
Note:
1. Commercial Product: TA=0 to 70°C
Industrial Product: TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+3.0V in case of pulse width≤30ns.
3. Undershoot: -3.0V in case of pulse width≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Min
4.5
0
2.2
-0.53)
Typ
Max Unit
5.0
5.5
V
0
0
V
-
Vcc+0.52) V
-
0.8
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
6
pF
-
8
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read
Min Typ Max Unit
-1 - 1 µA
-1 - 1 µA
- - 10 mA
Average operating current
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V -
-
7 mA
or VIN≥VCC-0.2V
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
- - 50 mA
Output low voltage
VOL IOL=2.1mA
- - 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 - - V
Standby Current(TTL)
ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
- - 3 mA
Standby Current(CMOS)
ISB1 CS1≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V, Other inputs=0~Vcc - - 501) µA
1. 50µA for Low power product, in case of Low Low power products are comercial=10µA, industrial=15µA.
4
Revision 3.0
March 2000
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