K6R1016C1C Просмотр технического описания (PDF) - Samsung

Номер в каталоге

Компоненты Описание

производитель

K6R1016C1C

64K x 16 Bit High-Speed CMOS Static RAM

Samsung 

K6R1016C1C-C/C-L, K6R1016C1C-I/C-P

DATA RETENTION CHARACTERISTICS*(TA=0 to 70°C)

Parameter

VCC for Data Retention

Data Retention Current

Symbol

VDR

IDR

Test Condition

CS≥VCC-0.2V

VCC=3.0V, CS≥VCC-0.2V

VIN≥VCC-0.2V or VIN≤0.2V

VCC=2.0V, CS≥VCC-0.2V

VIN≥VCC-0.2V or VIN≤0.2V

Data Retention Set-Up Time

Recovery Time

tSDR

tRDR

See Data Retention

Wave form(below)

* The above parameters are also guaranteed at industrial temperature range.

Data Retention Characteristic is for L-ver only.

CMOS SRAM

Min.

2.0

-

Typ.

-

-

Max.

5.5

0.4

Unit

V

mA

-

-

0.3

0

-

-

ns

5

-

-

ms

DATA RETENTION WAVE FORM

CS controlled

VCC

4.5V

tSDR

Data Retention Mode

tRDR

VIH

VDR

CS

GND

CS≥VCC - 0.2V

-9-

Revision 4.0

September 2001

Share Link: