K6R1016C1C Просмотр технического описания (PDF) - Samsung
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Компоненты Описание
производитель
K6R1016C1C Datasheet PDF : 11 Pages
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K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(2) (OE =Low fixed)
Address
CS
UB, LB
WE
Data in
Data out
tAS(4)
High-Z
tWC
tAW
tCW(3)
tBW
tWR(5)
tWP1(2)
tWHZ(6)
tDW
tDH
Valid Data
tOW
High-Z
(10)
(9)
TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled)
Address
CS
UB, LB
WE
Data in
Data out
tAS(4)
High-Z
tLZ
High-Z
tWC
tAW
tCW(3)
tBW
tWR(5)
tWP(2)
tWHZ(6)
tDW
tDH
Valid Data
High-Z
High-Z(8)
-7-
Revision 4.0
September 2001
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