K6R1008C1A-I Просмотр технического описания (PDF) - Samsung
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K6R1008C1A-I Datasheet PDF : 8 Pages
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PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
255Ω
+5.0V
480Ω
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
255Ω
+5.0V
480Ω
5pF*
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tPU
tPD
K6R1008C1A-12
Min
Max
12
-
-
12
-
12
-
6
3
-
0
-
0
6
0
6
3
-
0
-
-
12
* The above parameters are also guaranteed at industrial temperature range.
K6R1008C1A-15
Min
Max
15
-
-
15
-
15
-
7
3
-
0
-
0
7
0
7
3
-
0
-
-
15
K6R1008C1A-20
Min
Max
20
-
-
20
-
20
-
9
3
-
0
-
0
9
0
9
3
-
0
-
-
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev 4.0
-4-
February 1998
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