K4S640432F Просмотр технического описания (PDF) - Samsung
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K4S640432F Datasheet PDF : 11 Pages
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K4S640432F
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
Unit
-1.0 ~ 4.6
V
-1.0 ~ 4.6
V
-55 ~ +150
°C
1
W
50
mA
Note : Permanent device damage may occur if "ASOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
Min
VDD, VDDQ
3.0
VIH
2.0
VIL
-0.3
VOH
2.4
VOL
-
ILI
-10
Typ
Max
Unit
3.3
3.6
V
3.0
VDD+0.3
V
0
0.8
V
-
-
V
-
0.4
V
-
10
uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ0 ~ DQ3
Symbol
Min
CCLK
2.5
CIN
2.5
CADD
2.5
COUT
4.0
Max
4.0
5.0
5.0
6.5
Unit
Note
pF
1
pF
2
pF
2
pF
3
Notes : 1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
Rev.0.1 Sept. 2001
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