K4E641611D Просмотр технического описания (PDF) - Samsung

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производитель

K4E641611D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

K4E661611D, K4E641611D

LOWER BYTE READ CYCLE

NOTE : DIN = OPEN

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

A

VIL -

VIH -

W

VIL -

VIH -

OE

VIL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VOH -

VOL -

tRC

tRAS

tCRP

tCRP

tRCD

tASR

tRAD

tRAH

tASC

ROW

ADDRESS

tRCS

tCSH

tRSH

tCAS

tCAH

COLUMN

ADDRESS

tRAL

tAA

tRAC

OPEN

tOEA

tCAC

tCLZ

tOLZ

OPEN

CMOS DRAM

tRP

tRPC

tRRH

tRCH

tCEZ

tOEZ

DATA-OUT

Don′t care

Undefined

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