JC327 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
JC327 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
PNP general purpose transistor
Product specification
JC327
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit-board.
VALUE
0.2
UNIT
K/mW
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
hFE
VCEsat
VBE
Cc
fT
collector cut-off current
emitter cut-off current
IE = 0; VCB = −20 V
IE = 0; VCB = −20 V; Tj = 150 °C
IC = 0; VEB = −5 V
DC current gain
IC = −100 mA; VCE = −1 V
JC327-25
DC current gain
IC = −500 mA; VCE = −1 V
collector-emitter saturation voltage IC = −500 mA; IB = −50 mA
base-emitter voltage
IC = −500 mA; VCE = −1 V; note 1
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
transition frequency
IC = −10 mA; VCE = −5 V;
f = 100 MHz
Note
1. VBE decreases by about −2 mV/K with increasing temperature.
MIN. TYP. MAX. UNIT
−
−
−100 nA
−
−
−5 µA
−
−
−100 nA
160 −
40 −
−
−
−
−
−
8
80 −
400
−
−700
−1.2
−
−
mV
V
pF
MHz
1999 Apr 27
3
Share Link: 