IXGH20N140C3H1 Просмотр технического описания (PDF) - IXYS CORPORATION
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IXGH20N140C3H1 Datasheet PDF : 2 Pages
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
IC = IC100, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = IC100, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = IC100, VGE = 15V
VCE = 0.5 • VCES, RG = 5Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = IC100, VGE = 15V
VCE = 0.5 • VCES, RG = 5Ω
Note 2
RthJC
RthCK
TO-247
Characteristic Values
Min. Typ. Max.
10
17
S
1790
pF
145
pF
50
pF
88
nC
18
nC
30
nC
19
ns
12
ns
1.35
mJ
110
ns
32
ns
0.44 0.80 mJ
22
ns
13
ns
2.33
mJ
144
ns
380
ns
1.64
mJ
0.50 °C/W
0.21
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF
IF = 20A, VGE = 0V, Note 1
TJ = 125°C
IRM
IF = 20A, VGE = 0V,
trr
-diF/dt = 750A/μs, VR = 800V
RthJC
Characteristic Values
Min. Typ. Max.
3.0 V
2.8
V
19
A
70
ns
0.9 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXGH20N140C3H1
IXGT20N140C3H1
TO-247 Outline
123
∅P
Terminals: 1 - Gate
3 - Emitter
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate
2 & 4 - Collector
3 - Emitter
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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