IXGT20N120 Просмотр технического описания (PDF) - IXYS CORPORATION
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IXGT20N120 Datasheet PDF : 2 Pages
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Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
IC(ON)
VGE = 10V, VCE = 10V
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°C
tri
IC = IC90, VGE = 15 V
td(off)
VCE = 800 V, RG = Roff = 47 Ω
tfi
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
td(on)
tri
Eon
td(off)
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
tfi
increase for VCE (Clamp) > 0.8 VCES,
Eoff
higher TJ or increased RG
RthJC
RthCK
TO-247
Characteristic Values
Min. Typ. Max.
12 16
S
1750
pF
90
pF
31
pF
90
A
63
nC
13
nC
26
nC
28
ns
20
ns
400 800 ns
380 700 ns
6.5 10.5 mJ
30
ns
27
ns
0.90
mJ
700
ns
550
ns
9.5
mJ
0.83 K/W
0.25
K/W
IXGH 20N120
IXGT 20N120
TO-247
TO-247 Outline
Dim. Millimeter
Min. Max.
A
4.7 5.3
A
2.2 2.54
1
A
2.2 2.6
2
b
1.0 1.4
b 1.65 2.13
1
b 2.87 3.12
2
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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