IXGA50N60B4 Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXGA50N60B4 Datasheet PDF : 6 Pages
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6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
10
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 400V
I C = 72A
I C = 36A
15
20
25
30
RG - Ohms
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
35
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
5.0
3.0
4.5
Eoff
Eon - - - -
4.0
RG = 10Ω , VGE = 15V
VCE = 400V
2.5
3.5
3.0
2.0
2.5
I C = 72A
2.0
1.5
1.5
1.0
I C = 36A
1.0
0.5
0.0
0.5
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
400
420
350
300
TJ = 25ºC
tfi
td(off) - - - -
390
RG = 10Ω , VGE = 15V
VCE = 400V
360
250
330
200
TJ = 125ºC
300
150
270
100
240
50
TJ = 25ºC
210
0
180
15 20 25 30 35 40 45 50 55 60 65 70 75
IC - Amperes
IXGA50N60B4 IXGP50N60B4
IXGH50N60B4
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4.5
4.5
4
Eoff
Eon - - - -
4
RG = 10Ω , VGE = 15V
3.5
VCE = 400V
3.5
3
3
2.5
2.5
TJ = 125ºC, 25ºC
2
2
1.5
1.5
1
1
0.5
0.5
0
0
15 20 25 30 35 40 45 50 55 60 65 70 75
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
280
800
tfi
td(off) - - - -
260
TJ = 125ºC, VGE = 15V
700
VCE = 400V
240
600
220
500
I C = 72A
200
400
I C = 36A
180
300
160
200
140
100
10
15
20
25
30
35
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
320
400
tfi
td(on) - - - -
280
RG = 10Ω , VGE = 15V
370
VCE = 400V
240
340
200
160 I C = 72A
120
310
I C = 36A
280
250
80
220
40
190
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
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