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IXGT40N60B2 Просмотр технического описания (PDF) - IXYS CORPORATION

Номер в каталоге
Компоненты Описание
производитель
IXGT40N60B2
IXYS
IXYS CORPORATION IXYS
IXGT40N60B2 Datasheet PDF : 5 Pages
1 2 3 4 5
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 30 A; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 30 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3
Inductive load, TJ = 125°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3
(TO-247)
20
36
S
2560
pF
180
pF
54
pF
100
nC
15
nC
36
nC
18
ns
20
ns
130 200 ns
82 150 ns
0.4 0.8 mJ
18
ns
20
ns
0.3
mJ
240
ns
150
ns
1.10
mJ
0.42 K/W
0.25
K/W
IXGH 40N60B2
IXGT 40N60B2
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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