IXGT30N60C2 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
IXGT30N60C2 Datasheet PDF : 5 Pages
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Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
180
160
140
td(off)
tfi - - - - - -
RG =5Ω
VGE = 15V
VCE = 400V
IC = 48A
24A
12A
120
100
80
IC = 12A
60
24A
48A
40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
1000
Fig. 15. Capacitance
f = 1 MHz
Cies
IXGH 30N60C2
IXGT 30N60C2
Fig. 14. Gate Charge
15
VCE = 300V
12
IC = 24A
IG = 10mA
9
6
3
0
0
10
20
30
40
50
60
70
Q G - nanoCoulombs
Coes
100
10
0
Cres
5 10 15 20 25 30 35 40
VC E - Volts
Fig. 16. Maxim um Transient Therm al Resistance
1.0
0.5
0.1
1
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10
100
Pulse Width - milliseconds
1000
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