IXGH25N160 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
IXGH25N160 Datasheet PDF : 5 Pages
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Fig. 13. Resistive Turn-Off Switching Times
vs. Gate Resistance
1000
450
tf
td(off) - - - -
900 TJ = 125ºC, VGE = 15V
400
800 VCE = 1200V
350
700
I C = 50A
300
600
250
500
200
400
150
I C = 150A, 100A
300
100
200
50
10 15 20 25 30 35 40 45 50
RG - Ohms
IXGH 25N160
IXGT 25N160
Fig. 14. Gate Charge
16
14
VCE = 800V
I C = 50A
12
I G = 10 mA
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90
QG - NanoCoulombs
Fig. 15. Reverse-Bias Safe Operating Area
110
100
90
80
70
60
50
40
30
TJ = 125ºC
20
RG = 20Ω
10
dV / dT < 10V / ns
0
200
400
600
800 1000
VCE - Volts
1200
1400
1600
10,000
Fig. 16. Capacitance
f = 1 MHz
Cies
1,000
Coes
100
10
0
Cres
5
10
15
20
25
30
35
40
VCE - Volts
Fig. 17. Maximum Transient Thermal Resistance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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