IXFA16N50P Просмотр технического описания (PDF) - IXYS CORPORATION
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Компоненты Описание
производитель
IXFA16N50P Datasheet PDF : 4 Pages
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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25
RthJC
RthCH
(TO-220)
(TO-247)
IXFA16N50P IXFP16N50P
IXFH16N50P
Characteristic Values
Min. Typ. Max.
TO-220 (IXFP) Outline
9
16
S
2480
pF
237
pF
18
pF
23
ns
25
ns
70
ns
22
ns
43
nC
15
nC
12
nC
Pins: 1 - Gate
2 - Drain
0.42 °C/W
0.50
°C/W
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
16 A
64 A
1.5 V
200 ns
6.0
A
0.6
nC
TO-247 (IXFH) Outline
∅P
123
Note 1: Pulse test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
TO-263 (IXFA) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min. Max.
4.7
5.3
2.2 2.54
2.2
2.6
1.0
1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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