IXFV15N100P Просмотр технического описания (PDF) - IXYS CORPORATION
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IXFV15N100P Datasheet PDF : 4 Pages
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PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH15N100P
IXFV15N100P
IXFV15N100PS
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
M
d
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
15
40
7.5
500
15
543
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
Maximum lead temperature for soldering
Plastic body for 10s
300
°C
260
°C
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
Mounting force (PLUS 220)
11..65/2.5..14.6
N/lb.
TO-247
PLUS 220 types
6
g
4
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5
6.5 V
± 100 nA
25 μA
1.0 mA
670 760 mΩ
VDSS = 1000V
ID25 = 15A
≤ RDS(on) 760mΩ
trr
≤ 300ns
PLUS220 (IXFV)
G
DS
D (TAB)
PLUS220SMD (IXFV_S)
G
S
TO-247 (IXFH)
D (TAB)
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor controls
z Robotics and servo controls
© 2008 IXYS CORPORATION, All rights reserved
DS99891A(4/08)
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