IXFV14N80P Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXFV14N80P Datasheet PDF : 5 Pages
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IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Symbol
g
fs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
g(on)
Q
gs
Q
gd
R
thJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
V = 20 V; I = 0.5 I , pulse test
8 15
S
DS
D
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
3900
pF
250
pF
19
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 5 Ω (External)
26
ns
29
ns
62
ns
27
ns
V = 10 V, V = 0.5 V , I = 0.5 I
GS
DS
DSS D
D25
61
nC
18
nC
20
nC
(TO-247, TO-3P)
0.31 °C/W
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
Min. Typ. Max.
IS
VGS = 0 V
14 A
I
Repetitive
SM
40 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.5 V
trr
IF = 25A,
QRM
-di/dt = 100 A/μs
IRM
VR = 100V
250 ns
0.4
μC
5
A
TO-247 (IXFH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b 1.65 2.13
1
b 2.87 3.12
2
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXFT) Outline
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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