ITS640S2 Просмотр технического описания (PDF) - Infineon Technologies
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ITS640S2 Datasheet PDF : 14 Pages
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GND disconnect
Vbb
3 IN
1
ST
5 IS
VIN
V
ST
VIS
Ibb
4
Vbb
PROFET
GND
OUT 6
OUT 7
2
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull up
3 IN
1 ST
5 IS
4
Vbb
PROFET
GND
2
6
OUT
7
OUT
VIN VSTVIS
Vbb
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
4
high 3 IN
Vbb
OUT 6
1
ST
5 IS
PROFET
GND
OUT 7
2
Vbb
Normal load current can be handled by the PROFET
itself.
PROFET® ITS 640S2
Vbb disconnect with charged external
inductive load
4
high 3 IN
Vbb
OUT 6
1 ST PROFET
OUT 7
D
5 IS
GND
2
RL
L
Vbb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
E bb
=
Vbb
3 IN
1 ST
5 IS
4
Vbb
PROFET
E AS
OUT 6
OUT 7
GND
2
ELoad
EL
ER
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
∫ EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
2IL·R· LL·(Vbb
+
|VOUT(CL)|)·
ln
(1+
IL·RL
|VOUT(CL)|
)
Infineon Technologies AG
Page 9
2006-Mar-28
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