ISP620-1X Просмотр технического описания (PDF) - Unspecified
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ISP620-1X Datasheet PDF : 3 Pages
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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
55V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T = 25°C Unless otherwise noted )
A
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V )
F
1.0 1.15 1.3 V
I = ± 10mA
F
Output
Collector-emitter Breakdown (BVCEO) 55
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
Collector-emitter Dark Current (ICEO)
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP620-1, ISP620-2, ISP620-4
50
CTR selection available GB
100
30
Collector-emitter Saturation VoltageV
CE (SAT)
GB
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
Rise Time
tr
2
Fall Time
tf
3
Turn-on Time
ton
3
Turn-off Time
toff
3
V
V
100 nA
600 %
600 %
%
0.4 V
0.4 V
VRMS
V
PK
Ω
µs
µs
µs
µs
IC = 0.5mA
I
E
=
100µA
VCE = 20V
± 5mAIF , 5V VCE
± 5mAI , 5V V
F
CE
± 1mAIF , 0.4V VCE
± 8mAI , 2.4mAI
F
C
± 1mAIF , 0.2mAIC
See note 1
See note 1
VIO = 500V (note 1)
V = 10V ,
CC
IC= 2mA, RL= 100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92101m-AAS/A2
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